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resist polymer

Polymeric material that, when irradiated, undergoes a marked change in solubility in a given solvent or is ablated.
Notes:
  1. A resist polymer under irradiation either forms patterns directly or undergoes chemical reactions leading to pattern formation after subsequent processing.
  2. A resist material that is optimized for use with ultraviolet or visible light, an electron beam, an ion beam, or X-rays is called a photoresist, electron-beam resist, ion-beam resist, or X-ray resist, respectively.
  3. In a positive-tone resist, also called a positive resist, the material in the irradiated area not covered by a mask is removed, which results in an image with a pattern identical with that on the mask. In a negative-tone resist, also called a negative resist, the non-irradiated area is subsequently removed, which results in an image with a pattern that is the complement of that on the mask.
Source:
PAC, 2004, 76, 889 (Definitions of terms relating to reactions of polymers and to functional polymeric materials (IUPAC Recommendations 2003)) on page 903
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Cite as:
IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). Compiled by A. D. McNaught and A. Wilkinson. Blackwell Scientific Publications, Oxford (1997). XML on-line corrected version: http://goldbook.iupac.org (2006-) created by M. Nic, J. Jirat, B. Kosata; updates compiled by A. Jenkins. ISBN 0-9678550-9-8. doi:10.1351/goldbook.
Last update: 2014-02-24; version: 2.3.3.
DOI of this term: doi:10.1351/goldbook.RT07193.
Original PDF version: http://www.iupac.org/goldbook/RT07193.pdf. The PDF version is out of date and is provided for reference purposes only. For some entries, the PDF version may be unavailable.
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