material that, when irradiated, undergoes a marked change in solubility
in a given solvent or is ablated.
- A resist polymer under irradiation either forms patterns directly or undergoes chemical reactions leading to pattern
formation after subsequent processing.
- A resist material that is optimized for use with ultraviolet or visible light, an electron beam, an ion beam, or X-rays is called a photoresist, electron-beam resist, ion-beam resist, or X-ray resist, respectively.
- In a positive-tone resist, also called a positive resist, the material in the irradiated
area not covered by a mask is removed, which results in an image with a pattern identical
with that on the mask. In a negative-tone resist, also called a negative resist, the
non-irradiated area is subsequently removed, which results in an image with a pattern
that is the complement of that on the mask.
PAC, 2004, 76, 889
(Definitions of terms relating to reactions of polymers and to functional polymeric
materials (IUPAC Recommendations 2003))
on page 903
IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). Compiled by
A. D. McNaught and A. Wilkinson. Blackwell Scientific Publications, Oxford (1997).
XML on-line corrected version: http://goldbook.iupac.org (2006-) created by M. Nic,
J. Jirat, B. Kosata; updates compiled by A. Jenkins. ISBN 0-9678550-9-8. https://doi.org/10.1351/goldbook